Publications Franck Natali

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Peer-reviewed journal articles

2018

C. M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, F. Natali. Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN. Journal of Applied Physics, 123(11).

T. Maity, H. J. Trodahl, F. Natali, B. J. Ruck, & S. Vézian. Electron transport in heavily doped GdN. PHYSICAL REVIEW MATERIALS, 2(1), 5 pages.

2017

H. J. Trodahl, F. Natali, B. J. Ruck, & W. R. L. Lambrecht. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor. Phys. Rev. B 96, 115309.

F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano, & B. Ruck. Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy. MRS Advances, 2(03), 189-194.

J. R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano, & F. Natali. Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films. MRS Advances, 2(3), 165-171.

H. J. Trodahl, F. Natali, B. J. Ruck, & W. R. L. Lambrecht. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor. Physical Review B, 96(11), 115309-1-115309-6.

F. Natali, S. Vézian A., J. R. Chan, B. J. Ruck, & H. J. Trodahl. Rare earth nitride structure or device and fabrication method.

F. Natali, & S. Vézian. Rare earth nitride and group-III- nitride structure or device.

F. Natali, B. J. Ruck, & H. J. Trodahl. Ammonia production method and apparatus for ammonia production.

2016

F. Natali, B. J. Ruck, H. J. Trodahl, & J. R. Chan. Rare earth nitride structures and devices and method for removing a passivating capping.

J. R. Chan, S. Vézian, J. Trodahl, M. A. Khalfioui, B. Damilano, & F. Natali. Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN.Crystal Growth and Design, 16(11), 6454-6460.

H. Warring, H. J. Trodahl, N. O. V. Plank, F. Natali, S. Granville, & B. J. Ruck. Magnetic Tunnel Junctions Incorporating a Near-Zero-Moment Ferromagnetic Semiconductor.Physical Review Applied, 6(4), 6 pages.

S. Vézian, B. Damilano, F. Natali, M. A. Khalfioui, & J. Massies, AlN interlayer to improve the epitaxial growth of SmN on GaN (0001). Journal of Crystal Growth, 450, 22-27.

E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zulicke, B. J. Ruck. Superconductivity in the ferromagnetic semiconductor samarium nitride. PHYSICAL REVIEW B, 94(2-1), 024106-1-024106-8.

2015

F. Natali, B. J. Ruck, H. J. Trodahl, & S. Vézian. WO 2015/152737 A2, Doped rare earth nitride materials and devices comprising same.

J. F. McNulty, E. M. Anton, B. J. Ruck, F. Natali, H. Warring, F. Wilhelm, H. J. Trodahl. Twisted phase of the orbital-dominant ferromagnet SmN in a GdN/SmN heterostructure. Physical Review B - Condensed Matter and Materials Physics, 91(17).

F. Ullstad, J. R. Chan, H. Warring, N. Plank, B. Ruck, J. Trodahl, & F. Natali. Ohmic contacts of Au and Ag metals to n-type GdN thin films. AIMS Materials Science, 2(2), 79-85.

S. Granville, J .E. V. Anton, F. Natali, B. J. Ruck, H. J. Trodahl, & J. F. McNulty. Magnetic materials and devices comprising rare earth nitrides.

C. Lee, A. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, & F. Natali (n.d.). Highly resistive epitaxial Mg-doped GdN thin films. Applied Physics Letters, 106(2), 022401-1-022401-4.

2014

F. Natali, S. Vézian, S. Granville, B. Damilano, H. Trodahl, E. M. Anton, B. Ruck. Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films. Journal of Crystal Growth, 404, 146-151.

2013

F. Natali. Rare Earth Nitrides: The New Kids On The Block For Semiconductor Spintronics. ELECTRONICS WORLD, 119(1932), 7.

D. Binh, B. Ruck, F. Natali, A. Warring, H. Trodahl, E. M. Anton, A. Rogalev. Europium Nitride: A novel diluted magnetic semiconductor. Physical Review Letters, 111(16), 167206-1-167206-5.

B. J. Ruck, F. Natali, N. O. V. Plank, B. Do Le, M. Azeem, M. Alfheid, H. J. Trodahl. The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitrides. Physica B: Condensed Matter Vol. 407 (pp. 2954-2956).

F. Natali, B.J. Ruck, N.O.V. Plank, H.J. Trodahl, S. Granville, C. Meyer, and W. R. L. Lambrecht, Rare earth mononitrides, Review Article accepted in Progress in Materials Science (2013).

H. Warring, B.J. Ruck, H.J. Trodahl, and F. Natali, Electric field and photo-excited control of the carrier concentration in GdN, Appl. Phys. Lett. 102, 132409 (2013).

Eva-Maria Anton, B. J. Ruck, C. Meyer, F. Natali, Harry Warring, Fabrice Wilhelm, A. Rogalev, V. N. Antonov, and H. J. Trodahl, Spin/orbit moment imbalance in the near-zero moment ferromagnetic semiconductor SmN, Phys. Rev. B 87, 134414 (2013).

F. Natali, B.J. Ruck, H.J. Trodahl, Binh Do Le, S. Vezian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer, Role of magnetic polarons in ferromagnetic GdN, Phys. Rev. B. 87, 035202 (2013).

2012

B. Damilano, T. Trad, J. Brault, P. Demolon, F. Natali, and J. Massies, Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter, Phys. Stat. Sol. (a), Applications and Materials Science, 209 (3) (2012).

2011

J.H. Richter, B.J. Ruck, M. Simpson, F. Natali, N.O.V. Plank, M. Azeem, H.J. Trodahl, A.R.H. Preston, B. Chen, J. McNulty, K.E. Smith, A. Tadich, B. Cowie, A. Svane, M. van Schilfgaarde, and W.R.L. Lambrecht, Electronic structure of EuN: Growth, spectroscopy, and theory, Phys. Rev. B 84, 235120 (2011).

N.O.V. Plank, F. Natali, J. Galipaud, J. H. Richter, M. Simpson, B.J. Ruck, and H.J. Trodahl. Enhanced Curie temperature in N-deficient GdN. Appl. Phys. Lett. 98, 112503 (2011).

F. Natali, N.O.V. Plank, J. Stephen, M. Azeem, B.J. Ruck, H.J. Trodahl, and L. Hirsch. Epitaxial samarium disilicide films on silicon (001) substrates: growth, structural and electrical properties. Journal of Physics D: Applied Physics 44, 135404 (2011).

2010

F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, and L. Hirsch. Epitaxial growth of GdN on silicon substrate using an AlN buffer layer. J. Cryst. Growth 312, Issue 24, 3583 (2010).

B. Damilano, P. Demelon, J. Brault, T. Huault, F. Natali, and J. Massies. Blue-green and white color tuning of monolithic light emitting diodes. J. Appl. Phys. 108, 073115 (2010).

P.Y. Convers, D.N. McCarthy, A. Sattar, F. Natali, S.C. Hendy, and S.A. Brown. An electrical signature of nanoscale coalescence. Phys. Rev. B 82, 115409 (2010).

J.H. Buß, J. Rudolph, F. Natali, F. Semond, and D. Hägele. Temperature dependence of electron spin relaxation in bulk GaN. Phys. Rev. B 81, 155216 (2010).

F. Natali, N.O.V. Plank, B.M. Ludbrook, J. Richter, B.J. Ruck, H.J. Trodahl, J.V. Kennedy, and L. Hirsch. Epitaxial growth and electrical properties of thick SmSi2 layers on (001) silicon. Jpn. J. Appl. Phys. 49, 025505 (2010).

2009

J.H. Buß, J. Rudolph, F. Natali, F. Semond, and D. Hägele. Anisotropic electron spin relaxation in bulk GaN. Appl. Phys. Lett. 95, 192107 (2009).

F. Natali, Y. Cordier, J. Massies, S. Vezian, B. Damilano, and M. Leroux. Signature of monolayer and bilayer fluctuations in (Al,Ga)N/GaN quantum well width. Phys. Rev. B 79, 035328 (2009).

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, and J. Massies. Tailoring the shape of Al0.5Ga0.5N/GaN nanostructures to extend their luminescence in the visible range. J. Appl. Phys. 105, 033519 (2009).

2008

B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J-C Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies. Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate. Appl. Phys. Express 1, 121101 (2008).

B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies. Monolithic white light emitting diodes using a (Ga,In)N /GaN multiple quantum well light converter. Appl. Phys. Lett. 93, 101117 (2008).

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. N’Guyen, M. Leroux, and J. Massies. Blue emission from GaN/AlGaN quantum dots. Appl. Phys. Lett. 92, 051911 (2008).

2007

A. Awasthi, S.C. Hendy, P. Zoontjens, S.A. Brown, and F. Natali. Molecular dynamics simulations of reflection and adhesion behaviour in Lennard-Jones cluster deposition. Phys. Rev. B 75, 115437 (2007).

K.J. Stevens, B. Ingham, M.F. Toney, S.A. Brown, J. Partridge, A. Ayesh, F. Natali. Structure of oxidized bismuth nanoclusters. Acta Crystallographica Section B, 63 (4), 569 (2007).

2006

R. Reichel, J.G. Partridge, F. Natali, T. Matthewson, S.A. Brown, A. Lassesson, D.M.A. Mackenzie, A.I. Ayesh, K.C. Tee, A. Awasthi and S.C. Hendy. From the adhesion of atomic clusters to the fabrication of nanodevices. Appl. Phys. Lett. 89, 213105 (2006).

2005

D. Martrou, A. Cavanna, F. Natali, U. Gennser and B. Etienne. Unreconstructed As Atoms mixed with (3x2) cells and (6x6) supercells in low As pressure epitaxy on GaAs(001). Phys. Rev. B 72, 241307 (R) (2005). Article selected in Virtual Journal of Nanoscale Science & Technology review, Volume 12, Issue 26 (2005).

F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vezian, N. Grandjean, and J. Massies. Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells. Phys. Rev. B 71, 075311 (2005).

F. Semond, I. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix, and A. Vasson. Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon. Appl. Phys. Lett. 87 (2), 021102 (2005).

N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, and J. Massies. Spectroscopy of a bulk GaN microcavity grown on Si(111). Jpn. J. Appl. Phys. 44, 4902 (2005).

2004

F. Natali, D. Byrne, M. Leroux, F. Semond, and J. Massies. Optical properties of high-Al-content crack-free AlxGa1-xN (x<0.67) films grown on Si(111) by molecular beam epitaxy. Solid State Communications 132 (10), 679 (2004).

S. Vézian, F. Natali, F. Semond, and J. Massies. From spiral growth to kinetic roughening in molecular beam epitaxy of GaN (0001). Phys. Rev. B 69, 125329 (2004).

F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond, and J. Massies. Phonon deformation in hexagonal GaN. Phys. Rev. B 69, 155215 (2004).

A. Minko, V. Hoël, G. Dambrine, J-C. DeJaeger, Y. Cordier, F. Semond, F. Natali, and J. Massies. High microwave and noise performance of 0.17μm AlGaN–GaN HEMTs on high-resistivity silicon substrates. IEEE Electron Device Letters 25 (4), 167 (2004)

2003

D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies. Blue resonant cavity light emitting diodes with-Al-content GaN/AlGaN distributed Bragg reflector. Jpn. J. Appl. Phys. 42, Pt. 2, No 12B, L1509 (2003).

N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, and J. Massies. Rabi splitting observation in a bulk GaN microcavity grown on silicon. Phys. Rev. B 68, 153313 (2003).

F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, and B. Damilano. High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular beam epitaxy. Appl. Phys. Lett. 82 (4), 499 (2003).

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, P. Disseix, J. Leymarie, D. Byrne, F. Semond, and J. Massies. Determination of the refractive indices of AlN, GaN, and AlxGa1–xN grown on (111)Si substrates. J. Appl. Phys. 93 (9), 5222 (2003).

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. de Mierry, and F. Semond. Growth of high quality crack-free AlGaN films on GaN templates using relaxation through buried cracks. J. Appl. Phys. 94 (10), 6499 (2003).

R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, and J. Massies. AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density. Electron. Lett. 39 (7), 626(2003).

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laugt, O. Tottereau, P. Vennéguès, E. Dogheche, and E. Dumont. Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111). Appl. Phys. Lett. 82 (9), 1386 (2003).

2002

F. Natali, N. Antoine-Vincent, F. Semond, D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, and J. Leymarie. AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111). Jpn. J. Appl. Phys. 41, Pt 2, No 10B, L1140 (2002).

V. Hoel, N. Vellas, C. Gaquière, J. C. DeJaeger, Y. Cordier, F. Semond, F. Natali, and J. Massies. High-power AlGaN/GaN HEMTs on resistive silicon substrate. Electron. Lett. 38 (14), 750 (2002).

Refereed conference proceedings

2012

Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib, Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy, Phys. Stat. Sol. (c) 9, 523 (2012).

F. Natali, B. Ludbrook, J. Galipaud, N. Plank, S. Granville, A. Preston, Bin L. Do, J. Richter, I. Farrell, R. Reeves, S. Durbin, J. Trodahl, and B. Ruck, Epitaxial growth and properties of GdN, EuN and SmN thin films, Phys. Stat. Sol. (c) 9, 605 (2012).

2011

B.J. Ruck, F. Natali, N.O.V. Plank, Binh Do Le, M. Azeem, Maha Alfheid, C. Meyer, and H.J. Trodahl, The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitrides, Physica B : Condensed Matter 407, 2954 (2011).

2010

G. Rakotonanahary, S. Aberra Guebrou, D. Lagarde, F. Natali, F. Reveret, P. Disseix, J. Leymarie, M. Leroux, and J. Massies. Evidence of excitonic transitions by angle-resolved reflectivity for the determination of oscillator strengths in GaN/(Al,Ga)N quantum wells. Phys. Status Solidi C 7, No. 1, 48–51 (2010).

2009

F. Natali, Y. Cordier C. Chaix, and P. Bouchaib. Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source. J. Cryst. Growth, 311, (7), 2029 (2009).

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies. Al0.5Ga0.5N/GaN quantum dots and quantum dashes. Phys. Stat. Sol. (b), 246, (4), 842 (2009).

2008

Gaelle Parguez, Franck Natali, and Simon Brown. Oxidation of Bismuth Clusters. Current Applied Physics 8, (3-4), 287 (2008).

2006

S. A. Brown, J.G. Partridge, A. Lassesson, J. van Lith, A. Ayesh, R. Reichel, K. C. Tee, D. Mackenzie, M. Schulze and F. Natali. Cluster assembly: a technology for commercial production of nanowires. IEEE conference proceedings of 2006 International Conference on Nanoscience and Nanotechnology, 10.1109/ICONN.2006.340544.

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, and J-P. Faurie. Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111). SiC and GaN templates. Journal de Physique IV, 132, 365 (2006).

2005

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart and J.-P. Faurie. Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates. J. Cryst. Growth 278 (1-4), 383 (2005).

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès and J. Massies. AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111). J. Cryst. Growth 278 (1-4), 393 (2005).

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier, and J. Massies. Growth of wurtzite–GaN on silicon Si(100) substrate by molecular beam epitaxy. Phys. Stat. Sol. (c) 2 (7), 2187 (2005).

Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies. Electron mobility and transfer characteristics in AlGaN/GaN HEMTs. Phys. Stat. Sol. (c) 2 (7), 2720 (2005).

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, and J.P. Faurie. Layers quality and 2DEG behaviour in AlGaN/GaN HEMTs grown by molecular beam epitaxy. Phys. Stat. Sol. (c) 2 (7), 2195 (2005).

2003

L. Hirsch, F. Natali, P. Moretto, A.S. Barriere, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, and J. Leymarie. RBS studies of AlGaN/AlN Bragg reflectors. Phys. Stat. Sol. (a) 195 (3), 502 (2003).

Y. Cordier et al.. MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power. J. Cryst. Growth 251, 811 (2003).

Y. Cordier, et al.. AlGaN/GaN HEMTs on resistive Si(111) substrate: from materials assessment to RF performances. Phys. Stat. Sol. (c) 0 (1), 61 (2002).

F. Semond, Y. Cordier, N. Grandjean, F. Natali, D. Damilano, S. Vézian, and J. Massies. Molecular beam epitaxy of group-III nitrides on silicon substrates: growth, properties and device applications. Phys. Stat. Sol. (a) 188 (2), 501 (2001).